Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers
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چکیده
منابع مشابه
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and ...
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ژورنال
عنوان ژورنال: physica status solidi (a)
سال: 2016
ISSN: 1862-6300,1862-6319
DOI: 10.1002/pssa.201600776